ELECTRONIC DEVICES AND METHODS OF CONSTRUCTING AND UTILIZING SAME

摘要

A device (1) having a semiconductor junction whose electrical charge volume is controlled by a ferroelectric element (5). The ferroelectric (5) establishes the level of leakage of the pn junction to provide a gate-controlled diode or transistor device. The bipolar three-terminal gated diode may be used in memory matrices, neural synaptic networks, DRAM units, bipolar transistors, JFETs, and gallium arsenide and AlGaAs heterostructures.