发明名称 Transistor overcurrent detection circuit with improved response time
摘要 A circuit and method for determining overcurrent in a FET detects an output voltage of the FET in both a positive and negative polarity. The related positive or negative currents through the FET can be measured to determine whether an overcurrent condition exists. By measuring positive and negative currents in the FET, the overcurrent detector can obtain twice as much information as when measuring a positive current alone, and can respond more readily to overcurrent conditions. The overcurrent detector avoids the constraints typically observed in cycle-by-cycle PWM control with single polarity Vds sensing, while permitting a relaxation in the timing requirements for current sensing. A spike suppression circuit also contributes to longer sensing intervals.
申请公布号 US7626793(B2) 申请公布日期 2009.12.01
申请号 US20060339786 申请日期 2006.01.25
申请人 TEXAS INSTRUMENTS INCORPORATED 发明人 KAYA CETIN;TENG JAMES;NEESGAARD CLAUS
分类号 H02H3/08;H02H3/00;H02H9/02 主分类号 H02H3/08
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