| 摘要 |
<p>Thin thin film transistor comprises source and drain regions, (2,3) a channel forming region (1) formed between the source and drain regions (2,3), a first (main) gate (51) for turning on or off the transistor and in particular at least one second (sub-) gate (52) for reducing turn-off leakage current. When the n- channel transistor is turned off, for example, a negative voltage is applied to the main gate (51) to form a p channel layer in the channel forming region (1) under the main gate (51) and a positive voltage is applied to the subgate (52) to form an n channel layer in the channel forming region (1) under the subgate (52), for instance, so that a pn junction can be formed between under the main gate (51) and the subgate (52) to reduce the turn-off leakage current. The above-mentioned disclosure can be clearly applied to p-channel transistors. Further, the above four-termfinal transistor can be simply modified to a three-terminal transistor by connecting the main gate to the subgate via a diode or a capacitor or by directly connecting the drain region to the subgate. Further, the above three-terminal transistor can be manufactured in accordance with only the ordinary device manufacturing process. <IMAGE></p> |
