发明名称 Plasma etching using a bilayer mask
摘要 A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.
申请公布号 US5045150(A) 申请公布日期 1991.09.03
申请号 US19880210211 申请日期 1988.06.17
申请人 NATIONAL SEMICONDUCTOR CORP. 发明人 CLEEVES, JAMES M.;HEARD, JAMES G.;TAN, ZOILO C. H.
分类号 H01L21/027;H01L21/311;H01L21/3213 主分类号 H01L21/027
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