发明名称 |
Plasma etching using a bilayer mask |
摘要 |
A bilayer mask is utilized for etching a primary layer, which may be either an aluminum metallization layer or a dielectric layer. The bilayer mask includes both a thin resist layer and a metal imaging layer. The thin resist layer provides for high resolution patterning of the metal imaging layer. The metal imaging layer, in turn, provides for durability to withstand subsequent plasma etching of the underlying primary layer.
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申请公布号 |
US5045150(A) |
申请公布日期 |
1991.09.03 |
申请号 |
US19880210211 |
申请日期 |
1988.06.17 |
申请人 |
NATIONAL SEMICONDUCTOR CORP. |
发明人 |
CLEEVES, JAMES M.;HEARD, JAMES G.;TAN, ZOILO C. H. |
分类号 |
H01L21/027;H01L21/311;H01L21/3213 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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