| 摘要 |
PURPOSE: To protect the contact pad for connection with external power supply and the protective layer for heating element against damage by dry etching the overlying silicon nitride part to expose a first layer of silicon dioxide and then removing silicon oxide from the protective layer and contact pad by etching. CONSTITUTION: An electronic circuit comprising an MOS driver 48, a matrix electrode 33 and a common return 35 formed on a single crystal is protected against ink by arranging a layer 16 of silicon dioxide. A layer 13 of plasma (silicon) nitride is formed thereon. The oxide and nitride are then removed from a heating element (Ta protective layer 14) and an electrode terminal (a contact pad). At first, a plasma nitride layer is dry etched to expose a layer of dioxide which is then etched and removed from the Ta layer and the contact pad. |
