METHOD FOR FORMING CONTROL ELECTRODES OF THE SEMICONDUCTOR MEANS IN MOS, FAVOURABLY CMOS INTEGRATED CIRCUITS,申请号HU19870005110-传众专利搜索

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发明名称	METHOD FOR FORMING CONTROL ELECTRODES OF THE SEMICONDUCTOR MEANS IN MOS, FAVOURABLY CMOS INTEGRATED CIRCUITS
摘要
申请公布号	HUT56465(A)	申请公布日期	1991.08.28
申请号	HU19870005110	申请日期	1987.11.18
申请人	MIKROELEKTRONIKAI VALLALAT,HU	发明人	LENART,MARTA,HU;HORVATH,TIBOR,HU;PODMANICZKY,ISTVAN,HU;TIMAR,JOZSEF,HU;SZENDROENE DR. ERDELYI,KATALIN,HU;TRUTZ,SANDOR,HU
分类号	H01L21/28;H01L21/336;H01L29/78;(IPC1-7):H01L21/28	主分类号	H01L21/28
代理机构		代理人
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