| 摘要 |
<p>PURPOSE:To easily correct a defect in a phase shifter by selectively forming a material transmitting light for exposure on a region including the defect. CONSTITUTION:When a phase shifter 109 of a phase shift mask has a defect 21, information on the position and size of the defect 21 is stored and the mask is coated with a resist. This resist is selectively exposed and developed to form a prescribed resist pattern 22 on the mask except the defect part and the part of the phase shifter 19 not covered with the resist pattern 22 is selectively removed by etching with the pattern 22 as a mask. Disclosed transparent materials 18, 17 under the shifter 19 are then etched by a prescribed depth so that the phase difference between light passing through the material 17 and light passed through the shifter 19 and the materials 18, 17 is regulated to 360 deg.. Light passing through the resulting transmitting region and light passing through the original phase shifter region 19 can be handled as light having the same phase and the defect 21 can be corrected.</p> |
