| 摘要 |
PURPOSE:To enhance a light emitting diode in light emission power by a method wherein a part of a current blocking layer confronting a light emitting end face is cut out, a light emitting layer is formed partially penetrating into the cutout thus made, and a current path is formed in a part which confronts the light emitting end face. CONSTITUTION:When a forward bias is given to electrodes 7 and 8 of a light emitting diode, a current is injected only into a part of a current path 2A where a current blocking layer is not formed, as a result, only a part of an active layer 4 above the current path 2A serves as a light emitting section. Therefore, as shown by a chain line C, emitted light rays are projected outside from this end face. The lateral and the longitudinal shape of the emitted light are determined basing on the width of the current path 2A and the sum of the active layer 4 and clad layers 3 and 5 which sandwich the active layer 4 between them respectively, so that the emitted light becomes a fine slit light. As mentioned above, a current is concentrated on an end face and a part surrounding it, so that a low current region where no thermal saturation occurs is high in light emission power. |
