| 摘要 |
PURPOSE:To enhance a light emitting diode in light volume to emit outside by a method wherein a P-N junction layer is formed on a semiconductor substrate, and a transparent electrode is formed on the P-N junction concerned. CONSTITUTION:A light transmitting electrode 17 is formed on a P-N junction layer 13 formed on a semiconductor substrate 12. Therefore, light rays emitted from the P-N junction layer are taken outside without being blocked by an electrode. By this setup, a light emitting diode of this design can be sharply increased in light volume to emit outside as compared with a conventional one provided with an electrode formed of optical shielding material such as metal. Moreover, when an interposition layer formed of material whose carrier density is 1X10<18>cm<-3> or above is interposed between the P-N junction layer 13 and the electrode 17, an excellent ohmic junction can be realized between the P-N junction and the electrode. By this setup, an optical output linearly corresponding to the level of a drive voltage applied to a light emitting diode can be obtained, so that a light emitting diode can be sharply improved in characteristics. |
