| 摘要 |
PURPOSE:To make the titled device adapted for high density in a semiconductor device without necessity of considering a positioning margin by forming a contact hole by self alignment on a thin conductive wiring film of polysilicon or the like. CONSTITUTION:The Si oxidized film 2 of the first insulating film, the polysilicone 3 of the second conductive film, the Si3N4 4 of the second insulating film, and the PSG film 5 of the third insulating film are bonded to a substrate 1. With the patterened photoresist 6 as a protective film the films 5-3 are selectively etched vertically, with the photoresist 6 as a protective film the film 5 is overetched, the resist 6 is then removed, the parts shown in (A), (B) are covered with the photoresists, the film 4 in (C) is etched, the photoresists in (A), (B) are removed, with the film 4 in (B) as a protective film the polysilicon 3 is then selectively oxidized to form a contacting hole and the insulating oxidized film 8, the aluminum or the like covers the contacting part and is patterned. |
