| 摘要 |
PURPOSE:To suppress the loss of wiring information and to increase the length of refreshing period in a 1-transistor MOS memory by providing a substrate and a reversely conductive type minority carrier absorbing diffused region. CONSTITUTION:An insulating gate electrode 3 connected to a word line 5 as n type diffused region 2 and a transfer gate operating also as bit line simultaneously functioning as the source or drain of an MOS transistor and one electrode of a capacitor applied with a positive power voltage VDD are provided in the vicinity of a P type semiconductor substrate 1. Then, an n type minority carrier absorbing region 8 is provided, and when a potential of the same polarity as the storage electrode 4 is applied to the region 8 to expand a depletion layer 9 in the substrate 1 at the position, and the layer 9 and the depletion layer 7 are made to apprach to the information storage region to the state as continuing or isolating in response to the information storage state. |
