发明名称 |
Symmetrical blocking high voltage semiconductor device and method of fabrication |
摘要 |
An improved symmetrical blocking high voltage semiconductor device structure incorporating a sinker region and a buried region adjacent the periphery of the chip improves device operating characteristics and simplifies device fabrication processes. A heavily doped polycrystalline refill of a trench provides a deep junction sidewall region which brings the lower high voltage blocking junction to the upper surface.
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申请公布号 |
US5041896(A) |
申请公布日期 |
1991.08.20 |
申请号 |
US19890376073 |
申请日期 |
1989.07.06 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
TEMPLE, VICTOR A. K.;ARTHUR, STEPHEN D.;GRAY, PETER V. |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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