发明名称 |
Method for forming protective barrier on silicided regions |
摘要 |
The described embodiments of the present invention provide a protective layer on the surface of silicided regions and methods for its formation. In the primary described embodiment, a titanium silicide layer is formed in integrated circuitry using self-aligned techniques. Local interconnection layers may be formed using biproducts of the self-aligned titanium disilicide formation. A layer of another siliciding metal, for example platinum, is then formed overall. The platinum layer is then subjected to an annealing step which causes a portion of the silicon in the titanium disilicide layers to react with the platinum to form platinum silicide. This platinum silicide layer is formed in a self-aligned manner on the surface of the silicided regions. The platinum silicide layer serves to protect the underlying titanium disilicide layer from subsequent etching steps of other harmful processing operations.
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申请公布号 |
US5041394(A) |
申请公布日期 |
1991.08.20 |
申请号 |
US19910634970 |
申请日期 |
1991.01.07 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
SPRATT, DAVID B.;EKLUND, ROBERT H. |
分类号 |
H01L21/28;H01L21/285 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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