| 摘要 |
PURPOSE:To manufacture a photovoltaic element in high efficiency by a method wherein an amorphous semiconductor on the photoirradiating side is mainly composed of an amorphous silicon making specific optical band gap and in electric conductivity further in the specific diffusion potential of p-i-n junction. CONSTITUTION:A p-i-n junction amorphous silicon base photovoltaic element is composed so as to be irradiated with the light from p or n side, for example, when the light is irradiated from p side, said element is composed of a glass 1- a transparent electrode 2- a p type amorphous semiconductor 3- an i type alpha-Si semiconductor 4- an n type alpha-Si semiconductor 5- an electrode 6. The p type amorphous semiconductor 3 shall make an optical hand gap Eg.opt within the range of about 1.85eV - about 2.30eV and mainly comprising amorphous silicon in the electric conductivity at 20 deg.C exceeding about 10<-8>(OMEGA.cm)<-1> in the diffusion potential Vd of p-i-n junction exceeding about 1.1 volts. |
