| 摘要 |
<p>PURPOSE:To decrease number of manufacture processes, to reduce the cost and to realize small size without need of wire bonding connection by forming an LED and an LED drive circuit onto a same semiconductor substrate in a monolithic way. CONSTITUTION:An LED and an LED drive circuit are formed on a GaAs substrate 15. Al is doped to the LED by the doping technology. An n-channel layer 5 is formed as AlxGa1-xAs and a p-channel layer is formed as AlyGa1-yAs, and an intermediate n-channel layer 7 is formed as an n-channel GaAs so as to reduce majority carriers than that of the layer 5 in the constitution of the LED. Holes and electrons are combined in the part of the n-channel layer 7 to emit a light and to dissipate the light in the direction of the n-channel layer 5. As parts to drive the light emission, an electrode 1 of a shift register, a shift register 2, an N-channel transistor 4 and a gate 3 are formed on the GaAs substrate.</p> |
