| 摘要 |
PURPOSE:To improve light emission directivity and light emission efficiency by forming the pn junction between a p-type region, consisting of a mixed crystal structure part where the compositions of first second n type epitaxial films different in composition are leveled, and an n-type region, consisting of a film periodic structure, within an active layer. CONSTITUTION:An active layer 3 has film periodic structure where first n-type epitaxial films 2 having the film thickness of 1-5 molecular layers and second n-type epitaxial films 5 being different in composition from the first n-type epitaxial film 2 and having the film thickness 1-5 molecular layers are repeatedly laminated alternately, and further one part of the active layer 3 is made a mixed crystal structure part 3a wherein the composition periodicity of the film period structure is disordered by selectively forming a p-type selective diffusion part 9 or a p-type selective ion implantation layer, which reaches the active layer 3 from above the second n-type epitaxial layer 5 and the compositions of the n-type epitaxial films 2 and 5 are leveled. Hereby, a light emitting diode, in which the directivity of light emission is favorable and light emission efficiency is high, can be realized. |
