发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To sharply enhance the hardness at a high temperature after hardening, to enhance a wire bonding property and to obtain a device whose reliability is high by a method wherein an insulating adhesive which fixes and bonds an insulating substrate onto a bed contains a metal whose surface is provided with an oxide film other than a silicon oxide. CONSTITUTION:In a device where a semiconductor pellet and an insulating substrate 2 have been mounted respectively on a bed 1a of a lead frame 1, the insulating substrate 2 is fixed and bonded onto the bed 1a by using an insulating adhesive 3, and the insulating adhesive 3 contains a metal whose surface is provided with an oxide film other than a silicon oxide. Since the insulating adhesive contains the metal in addition to the silicon oxide in this case, the content by percentage of a filler becomes high and the hardness after hardening is enhanced. When a filling rate is increased, a wire bonding operation can be executed at an optimum temperature. In this manner, sufficient hardness is obtained even at a high temperature after hardening, and an excellent wire bonding property and high reliability are provided.
申请公布号 JPH03185741(A) 申请公布日期 1991.08.13
申请号 JP19890324753 申请日期 1989.12.14
申请人 TOSHIBA CORP;TOSHIBA CHEM CORP 发明人 YANAGIDA SATORU;ARAKI KOJI;OKUNOYAMA TERU;NIIMI TETSUNAGA
分类号 H01L21/52;H01B3/00;H01L21/60;H01L23/495 主分类号 H01L21/52
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