| 摘要 |
PURPOSE: To obtain a cryogenic power semiconductor element used for an electronic assembly, which is cooled to a very low temperature by providing a power semiconductor chip, a substrate which is made of a thermally conductive material having an electrical insulating property and has a surface for mounting the element chip, and a means which mounts the substrate in a cryogenic section. CONSTITUTION: A cryogenic power semiconductor element is incorporated with a power semiconductor element chip 12, a substrate 11 which is made of a thermally conductive material having an electrical insulating property and has a surface 11a for mounting the chip 12, and a means 14 which mounts the substrate 11 in a cryogenic section 15. For example, a power semiconductor element 10 which can be cooled to a very low temperature has a heat radiating member 11 made of a material, such as the beryllia, etc., and the solid-state power semiconductor element chip 12 is mounted on the first surface 11a of the member 11. The second surface 11b is mounted on a thermally conductive structure member 14 made of copper, etc., and the chip 12 and a thermally conductive heat radiating member 11 for support are kept in a tank 15 containing such a cryogenic liquid as the liquid nitrogen (LN2 ) of about 77 deg.K in temperature. It is preferable to arrange the element 10 in a vertical plane. |
