发明名称 METHOD AND STRUCTURES FOR MAKING INTEGRATED CIRCUITS
摘要 <p>In a method for making integrated circuits, a semiconductor substrate is provided which carries a plurality of unconnected devices of a first device type at regularly spaced regions (202) of the substrate and a plurality of unconnected devices of a second, distinct device type at substantially all regions (204) of the substrate other than those carrying devices of the first device type, and at least one interconnection layer is formed on the substrate to interconnect selected ones of the devices of the first device type and the devices of the second device type to define a plurality of integrated circuits. Pad regions (230) may be formed over unconnected devices for connection of the integrated circuits to package terminals. The integrated circuits are separated by regions (240) containing unconnected devices, and the semiconductor substrate may be scribed and broken or otherwise cut in these regions (240) to separate the integrated circuits.</p>
申请公布号 WO1991011825(A1) 申请公布日期 1991.08.08
申请号 CA1990000402 申请日期 1990.11.21
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