Superconductor gate field effect transistor.

摘要

In a Field Effect Transistor (FET) the use of a high Tc oxide superconductor material in the gate electrode (8) provides both control of parasitic resistance and capacitance and a proper work function when operated at a temperature below the Tc. The 1-2-3 compound oxide superconductors with the general formula Y1Ba2Cu3O7-y where y is approximately 0.1 have the ability in use in FET's to provide convenient work functions, low resistance and capacitance, and to withstand temperatures encountered in processing as the FET is being manufactured.