Method for growing silicon single crystal

摘要

A method for growing silicon single crystal uses as materials, silicon granules prepared by the silane process and having a residual hydrogen concentration of 7.5 wtppm or less, silicon granules prepared by the trichlorosilane process and having a residual chlorine concentration of 15 wtppm or less. In the case where such silicon granules are used, a bursting phenomenon does not occur when the silicon granules are melted. As a result, there is no scattered matter due to the bursting phenomenon, whereby the growth condition of the single crystal is not disturbed.