发明名称 |
Multi-layered field oxide structure |
摘要 |
A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.
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申请公布号 |
US5037781(A) |
申请公布日期 |
1991.08.06 |
申请号 |
US19880220764 |
申请日期 |
1988.07.05 |
申请人 |
UNITED TECHNOLOGIES CORPORATION |
发明人 |
WOODRUFF, RICHARD L.;CHAFFEE, JOHN T.;HAFER, CRAIG |
分类号 |
H01L21/316;H01L21/762 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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