发明名称 Multi-layered field oxide structure
摘要 A radiation-hardened field oxide comprises a thin layer of high-quality thermal oxide, a thick layer of borophosphosilica glass and a diffusion barrier layer of undoped oxide, with the boron and phosphorous provising recombination sites for electron-hole pairs.
申请公布号 US5037781(A) 申请公布日期 1991.08.06
申请号 US19880220764 申请日期 1988.07.05
申请人 UNITED TECHNOLOGIES CORPORATION 发明人 WOODRUFF, RICHARD L.;CHAFFEE, JOHN T.;HAFER, CRAIG
分类号 H01L21/316;H01L21/762 主分类号 H01L21/316
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