| 摘要 |
<p>PURPOSE:To improve boosting capacity, and to inverse high voltage by connecting high voltage power supply to the drain side of the MOS transistor(TR) of low threshold voltage, and connecting a pull-up TR and the drain of the MOS TR of the low threshold voltage to its source side. CONSTITUTION:By using the MOS TRs A, C, E, F of the low threshold voltage, a TR is turned ON by low voltage. Besides, by connecting a pull-up TR G to the source sides of the MOS TRs A, C, E, F of the low threshold voltage in order to suppress a current from the high voltage power supply, and impressing substrate voltage to the MOS TRs A, C, E, F of the low threshold voltage, the current from the high voltage can be cut off when the gate input voltage of the MOS TRs A, C, E, F of the low threshold voltage is nearly Ov. Further, the MOS TRs A, C, E, F of the low threshold voltage are connected to the source side of the pull-up TR G so that the current of ordinary power supply to flow through the pull-up TR G can be cut off. Thus, the title circuit is boosted by the low voltage so that the high voltage can be inversed.</p> |
