| 摘要 |
PURPOSE: To measure temperature extremely accurately by forming a heat- sensing circuit with an input and an output by one portion of a semiconductor device and performing cross connection, so that a proper change of the conductivity of a device due to temperature can be amplified. CONSTITUTION: An output voltage 14 of a thermal stress detection circuit is expressed as a function of an input voltage 12 and the temperature, the output 14 is processed by a gate array 10 and is converted into a digital signal that expresses a temperature range, including the temperature of a chip substrate. The gate array 10 is integrated into a substrate in the same region as a thermal stress detection circuit 6. Then, resistance to the current of transistors 20, 28, and 36 of a thermal stress detection circuit 6 increases as the temperature of the chip substrate rises, the output voltage 14 increases due to the increase of the resistance, and a temperature range, including the actual temperature of the chip substrate, is instructed according to the output state of the gates 38, 40, 42, and 44. Also, an internal circuit is provided to decrease the operating duty cycle or to inhibit the selection of the chip, when the temperature of the chip substrate is excessively high. |
