| 摘要 |
<p>PURPOSE: To reduce an undesired photocurrent at the time of use by providing an inactivated material with a layer of a semiinsulating semiconductor material and extending a layer of an insulating material between a diode structure and the semiinsulating semiconductor layer. CONSTITUTION: A diode structure 14 is surrounded with an inactivated material 18, and this material 18 covers the erect side face of the diode structure and the upper face of the diode structure except the area of an aperture part 19 which an upper conductive layer 20 on the inactivated material passes so as to come into contact with the diode structure. The inactivated material 18 is extended to sides of the diode structure on adjacent substrate surfaces, and the upper conductive layer 20 is made of a metal like aluminium or chromium. The upper conductive layer 20 has an extended track which is formed from a single deposit layer, which is extended on the surface of the inactivated material 18, into one body together with the layer 20 similarly to a lower conductive layer 16, and electric connection to the upper conductive layer 20 is made through this extended track. Thus, the photocurrent for use is reduced.</p> |
