| 摘要 |
<p>PURPOSE:To provide a high contrast ratio, good visual angle characteristics and less after-images by non-paralleling the rubbing direction of an array substrate from scan ning lines and signal lines and confining the forming positions of the entire part of thin-film transistors within a first half region at the time when one picture element is subjected to rubbing. CONSTITUTION:The rubbing direction 18 indicates the direction where rubbing is executed at the time when the orientation treatment by the rubbing is executed. The direction is non parallel with the scanning lines 11 and the signal lines 13, for example, the direction makes about 45 deg. angle with these lines. Namely, the reason for determin ing the rubbing direction 18 so as to attain about 45 deg. with the scanning lines 11 and the signal lines 13 lies in such a direction that the ordinary observation direction is aligned to the good visual angle direction. The forming positions of the thin film transistors (TFT) 10 in the entire part are confined within the first half region 19 at the time when the one picture element is subjected to the rubbing. The gate electrodes 12, therefore, exist within the first half region 19, by which the electric field in the horizontal direction between the picture element electrodes 15 and the scanning lines 11 and between the display picture element electrodes 15 and the signal lines 13 is relieved. The generation of tilt and reverse is suppressed in this way and the unequal display of, for example, every other one line is eliminated.</p> |
