发明名称 |
PROCESS FOR MAKING SILICIUM CRYSTALS FOR PHOTOVOLTAIC APPLICATIONS |
摘要 |
<p>1. A method of obtaining silicon crystals for photovoltaic applications and having a photovoltaic conversion efficiency of not less than 10%, in which the silicon is purified by passing through a plasma jet, the starting material being constituted by monocrystalline or polycrystalline P-type or N-type recyclable silicon waste having a concentration of impurities and a crystallization state such that its resistivity is not less than 0,05 ohm.cm.</p> |
申请公布号 |
GR3000550(T3) |
申请公布日期 |
1991.07.31 |
申请号 |
GR19900400367T |
申请日期 |
1990.06.11 |
申请人 |
PHOTOWATT INTERNATIONAL S.A. |
发明人 |
AMOUROUX, JACQUES;MORVAN, DANIEL;APOSTOLIDOU, HELENE;SLOOTMAN, FRANK |
分类号 |
C30B13/16;C30B13/00;C30B13/22;C30B29/06;H01L21/00;H01L31/04;(IPC1-7):C30B29/06 |
主分类号 |
C30B13/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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