FORMATION OF SEMICONDUCTOR ELEMENT ISOLATION REGION,申请号JP19890313720-传众专利搜索

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发明名称	FORMATION OF SEMICONDUCTOR ELEMENT ISOLATION REGION
摘要
申请公布号	JPH03173428(A)	申请公布日期	1991.07.26
申请号	JP19890313720	申请日期	1989.12.01
申请人	SEIKO INSTR INC	发明人	AOKI KENJI;AKAMINE TADAO;SAITO NAOTO
分类号	H01L21/76;H01L21/316	主分类号	H01L21/76
代理机构		代理人
主权项
地址

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