| 摘要 |
PURPOSE:To shorten a wiring delay time by providing the following: a gate array formed on a memory block via an insulating film; and a through hole which is made in the insulating film and which electrically connects the memory block to the gate array. CONSTITUTION:A memory device 3 is arranged and installed after it has been divided into a plurality of memory blocks 6 so as to be able to comply with a logic circuit on a wide gate array 2 and so as to be arranged just close to the logic circuit. In addition, the individual memory blocks 6 are connected electrically to prescribed circuit parts of the corresponding upper-layer gate array 2 via through holes 7. Since the memory blocks 6 are arranged close to the gate array 2 and are connected electrically by the through holes 7 whose line length is extremely short in this manner, the input/output processing of a data or the like with reference to a memory circuit can be executed at a low loss and at high speed. As a result, a result of various operations in the gate array 2 can be obtained quickly. That is to say, a wiring delay, time can be shortened. |
