| 摘要 |
PURPOSE:To provide an integrated circuit device having a protective diode element which realizes good characteristics even if it is manufactured in a low temperature by forming a protective diode on a second semiconductor layer of first conductivity type which is deposited on a first semiconductor layer of first conductivity type and by forming a first buried region of second conductivity type in an area near a boundary between both layers. CONSTITUTION:A base of a buried region of second conductivity type is formed on a surface of a first semiconductor layer P<->30 of first conductivity type by using photolithography technique. The base of the buried region is formed on a place corresponding to a predetermined formation place of a bipolar transistor and a protective diode. Then, while a second semiconductor layer P31 is deposited, buried regions 32, 33 of second conductivity type are completed at an area near a boundary between the two layers P<->30 and P31. A second region 36 which functions as a collector region of second conductivity type, collector output parts 37, 37 and a first region 35 which functions as a protective diode N region are formed by ion implantation process of P. According to this method, it is possible to form a protective diode having good characteristics even if it is manufactured at a low temperature and in a short time. |
