| 摘要 |
PURPOSE: To enhance reliability and electrical characteristics of a capacitor by continuous stacking a second conductive layer, a dielectric film and a third conductive layer on the inner face of a trench and a transistor, forming a capacitor pattern and forming a fourth conductive layer on the capacitor pattern, so that it is insulated from the second conductive layer. CONSTITUTION: A gate insulating layer 6a is formed on a gate electrode 2, and a first conductive layer 5 and an etching inhibition layer 6b is formed on the gate insulating layer 6a. A second conductive layer 12 is formed on a part of the etching inhibition layer 6b on the inner face of a trench 10, and a dielectric film 13 is formed on a second conductive layer 12a. Then, a third conductive layer 14 is formed on the dielectric film 13. A second insulating layer 19 is formed along the sidewalls of the second conductive layer 12, the dielectric film 13 and a third conductivity layer 14, and the fourth conductive layer 15 is formed, so that it covers the third conductive layer 14 and the second insulating layer 19 so as to make a stack/trench merging-type structure. Thus, reliability and electrical characteristics of the capacitor can be enhanced. |
