Semiconductor device and method of producing the same

摘要

A semiconductor device in accordance with the present invention includes a semiconductor chip 1 which is bonded to a die pad 3 by using a solder 17 having a liquidus line temperature of 370 DEG C or less which avoids cracking a glass layer 6. A copper ball formed by flaming out one end of a copper wire 8 is moved downward to an Al electrode pad 5 on the semiconductor chip and brought into contact for less than 150 ms also avoiding cracking the glasslayer. Plastic deformation then occurs so that the copper ball is pressed to the aluminum electrode pad in such a manner that the height of the copper ball is 25 gm or less. A silver plating 2 is utilized on the die pad and an Au-metallized layer 16 on the rear side of the semiconductor chip. The method also decreases the work hardening property of the Cu ball and prevent Al exclusion when the Cu ball is bonded to the Al electrode pad.