SEMICONDUCTOR DEVICE AND ITS MANUFACTURE

摘要

PURPOSE: To form a semiconductor device, regulating the flow passage of charge carriers between second main faces by forming a rectifying junction for one first main face, to which contact is easy and which relatively has a low- resistance passage. CONSTITUTION: Electric conductive patterns 20 forming Schottky junctions 21 with either a first or second semiconductor main body 1 or 11 are provided on one first main face 12 and the rectifying junction patterns 21 are regulated. When voltage is applied to first and second main electrodes 30 and 32 at the time of operating the device, the flow of current is controlled by the voltage of Schottky junction 21 and the gate electrode 31 with the passage regulated by the electric conductive pattern 20 of the Schottky junction 21 between the second main faces 3 and 13. A material forming the Schottky junction 21 has high electric conductivity and has low resistance on the face of the electric conductive pattern 20. The electric conductive pattern or electric contact to the gate 20 is formed comparatively easily, and a large gate voltage is applied to the gate electrode 31, without causing breakdowns between a source and the drain electrodes 30 and 32.