| 摘要 |
<p>PURPOSE:To semipermanently hold stored data by constituting a memory device of plural memory elements consisting of thin film transistors (TRs). CONSTITUTION:A gate insulating film 82 is formed with an SiN film having a hysteresis property as the common insulating film used as the gate insulating film of a memory TR T10 and the insulating film of a selecting TR T20, and the area except the part of the memory TR T10 of this SiN film is formed into a non-hysteresis part 82a, where Si/N is reduced to a value approximately equal to a stoichiometric ratio by oxidation or nitriding to eliminate the hystere sis property. Thus, prescribed functions can be given to thin film TRs T10 and T20, respectively, and this device can be operated as an electrically writable /erasable/readable non-volatile semiconductor memory (EEPROM).</p> |
