发明名称 |
Process for forming cvd SiO2 film with polysiloxane/ozone reaction and semi-conductor device. |
摘要 |
<p>In a process for forming a CVD film, a polysiloxane compound having at least two silicon-oxygen bonds is reacted with ozone to form an SiO2 film. If desired, the reaction may be effected in the presence of a gas containing an impurity mixed with the polysiloxane compound and ozone to form a PSG, BSG or BPSG film. In a semiconductor device, the SiO2 film, or the PSG, BSG or BPSG film is used as a planarizing film, an interlayer insulating film, or a cover insulating film.</p> |
申请公布号 |
EP0436185(A1) |
申请公布日期 |
1991.07.10 |
申请号 |
EP19900124838 |
申请日期 |
1990.12.19 |
申请人 |
SEMICONDUCTOR PROCESS LABORATORY CO., LTD.;ALCAN- TECH CO., INC. |
发明人 |
MAEDA, KAZUO;TOKUMASU, NOBORU;NISHIMOTO, YUKO |
分类号 |
C23C16/40;H01L21/316 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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