| 摘要 |
PURPOSE:To accurately measure the relative error of an alignment by forming an alignment pattern of a measuring mark in a protruding shape and a pattern to be aligned in a protruding pattern out of the alignment pattern. CONSTITUTION:A base film 12 is formed on a semiconductor substrate 11. Then, it is coated with a photoresist film, a mask pattern is exposed, executed through processes such as developing, dry etching, etc., and an alignment pattern 13 of a protruding shape is formed of the base film. Then, it is coated with a photoresist film 14. After it is exposed and developed, a pattern 15 to be aligned of a protruding shape is formed of the photoresist film. The edge of the alignment pattern and the edge of the pattern to be aligned are formed substantially on the same plane. Accordingly, since the focal point position of an optical microscope is common for both the patterns, images of the alignment pattern and the pattern to be aligned can be simultaneously observed. Therefore, the scale of a vernier can be read without fail. |
