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发明名称
INSULATED-GATE FIELD-EFFECT TRANSISTOR OF COMPOUND SEMICONDUCTOR
摘要
申请公布号
JPH03156974(A)
申请公布日期
1991.07.04
申请号
JP19890296723
申请日期
1989.11.15
申请人
TOSHIBA CORP
发明人
ISHIMURA HIROSHI;SASAKI KAZUMI
分类号
H01L29/78
主分类号
H01L29/78
代理机构
代理人
主权项
地址
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