发明名称 |
Method of thin film formation. |
摘要 |
<p>A method of forming a thim film of a compound substance on a substrate comprises a process of cleaning the substrate by bombarding the same with a high energy molecular or cluster beam consisting of one of the chemical elements constituting the above compond substance whose thin film is to be formed. Another method is of forming a dislocation-free thin film on a compound substance by depositing, prior to forming an aiming film, a buffer layer on a substrate, the buffer layer being formed by alternately applying to the substrate a high-energy and a low-energy molecular beams each of which consists of each of the chemical elements constituting the above compond substance.</p> |
申请公布号 |
EP0435639(A2) |
申请公布日期 |
1991.07.03 |
申请号 |
EP19900314202 |
申请日期 |
1990.12.21 |
申请人 |
SHIMADZU CORPORATION |
发明人 |
KOBAYASHI,YUTAKA;SHINOHARA, MAKOTO;OGAWA, KIYOSHI;OHTANI, FUMIHIKO MELODY HEIM;KISHIHARA, HIYOYUKI |
分类号 |
H01L21/20;H01L21/203 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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