发明名称 Method of thin film formation.
摘要 <p>A method of forming a thim film of a compound substance on a substrate comprises a process of cleaning the substrate by bombarding the same with a high energy molecular or cluster beam consisting of one of the chemical elements constituting the above compond substance whose thin film is to be formed. Another method is of forming a dislocation-free thin film on a compound substance by depositing, prior to forming an aiming film, a buffer layer on a substrate, the buffer layer being formed by alternately applying to the substrate a high-energy and a low-energy molecular beams each of which consists of each of the chemical elements constituting the above compond substance.</p>
申请公布号 EP0435639(A2) 申请公布日期 1991.07.03
申请号 EP19900314202 申请日期 1990.12.21
申请人 SHIMADZU CORPORATION 发明人 KOBAYASHI,YUTAKA;SHINOHARA, MAKOTO;OGAWA, KIYOSHI;OHTANI, FUMIHIKO MELODY HEIM;KISHIHARA, HIYOYUKI
分类号 H01L21/20;H01L21/203 主分类号 H01L21/20
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