Forming connections in semiconductor devices

摘要

A method of manufacturing a semiconductor device is described in which a spacer (18') is provided in an opening (19) and between a first conductor (12) and a further conductor (20) so as to fix a certain gap between the two conductors. The spacer (18') results from the selective etching of a third insulating layer provided before the further conductor is applied. The size of the gap between the first and further conductors is not reliant upon the accuracy of the position of an etching mask upon the device. Moreover, a "step-coverage problem" is alleviated by a gently sloping entrance to the opening.