| 摘要 |
<p>The major portion of the crucible (13) in which a compound semiconductor ingot is grown has an inner surface (14) which, in a section taken transverse to the crucible axis, substantially defines an ellipse. As a consequence, the ingot (20) grown in the crucible has an elliptical cross-section. After the ingot is removed from the crucible, it is cut at an angle with respect to the central axis of the ingot and in the direction of the minor axis of the ellipse defining the ingot cross-section. Wafers cut from the ingot will have a circular periphery if the sine of the angle at which they are cut substantially equals y + x where y is the thickness of the ingot along the minor axis of the ellipse, and x is the thickness of the ingot along the major axis of the ellipse. <IMAGE></p> |
