| 摘要 |
Single crystals of boron phosphide are prepared by volatilizing a crude, or amorphous, B.P. of any purity at at least 600 DEG C. in the presence of HCl, BBr, or HI vapour, and heating the resulting gas mixture to a temperature at least 50 DEG C. higher than that in the volatilizing zone, but not exceeding 1800 DEG C. The reaction may be under sub- or super-atmospheric pressure, e.g. 0.01-2 atmospheres, and the BP is deposited. The first temperature may be 600-1500 DEG C. and the second 800-1800 DEG C., with a temperature difference 50-1000 DEG C. |
