| 摘要 |
PURPOSE:To improve the adhesion of a base body and an SiC film at the time of forming the SiC films on the surface of parts contg. free Si and consisting of SiC as a base body at the time of a heat treatment of semiconductors by forming the SiC films in which the free Si content decreases gradually toward the surface by a CVD method between the surface of the above-mentioned parts and the SiC film. CONSTITUTION:The SiC-Si layer 2 contg. 10% free Si is formed by the CVD method on the surface of the SiC base body 1 contg. 20% free Si as the parts for treating the semiconductors at 10 to l00mum thickness, then the SiC-Si layer 3 contg. 5% free Si is formed thereon at 10 to 100mum thickness and further, the SiC layer 4 contg. no free Si at all is formed on the extreme surface at 10 to 300mum thickness, by which the SiC layers of 100 to 300mum total thickness are provided thereon in order to prevent the contamination of the semiconductors by the diffusion of impurities from the inside of the parts at the time of using the SiC to produce the parts, such as wafer boats, to be used when the semiconductor is heat treated at a high temp. The SiC parts having the SiC films which do not peel from the base material 1 or crack and having a long life are produced. |
