| 摘要 |
A bistable integrated semiconductor circuit has four field effect transistors (1, 2, 3, 4), two (1, 2) of P-type and two (3, 4) of N-type. The circuit has connections (5, 6) for a supply voltage between which the transistors are series-connected in pairs, each series connection comprising one P-type transistor and one N-type transistor. The points of connection of the transistors are connected to signal connections (7, 8). The transistors of P-type (1, 2) are connected to the positive supply connection (5) and the transistors (3, 4) of the N-type are connected to the negative supply connection (6). The two transistors (1, 2) of P-type are arranged at different levels and separated by a thin electrically insulating layer. That main region (13 and 23, respectively) of each transistor, which is connected to a signal connection, overlaps the channel region (25 and 15, respectively) of the other transistor. The two transistors of N-type are arranged in a corresponding way. By applying a positive voltage to a signal connection (7), the circuit is brought to assume one of its two stable positions with the transistors (1 and 4) conducting and the transistors (2 and 3) non-conducting. By applying a negative voltage to a signal connection, the circuit is brought to change to the second of its two stable positions, with the transistors (2 and 3) conducting and the transistors (1 and 4) non-conducting. |
