| 摘要 |
PURPOSE:To make the difference of refractive index small and to suppress lateral mode oscillation of a higher order of a semiconductor laser element by a method wherein the center part of wave guiding path is excited concentrically with current concentration guiding mechanism. CONSTITUTION:A V-shape groove 2 is formed at the center part of growth face of an N type GaAs substrate 1, and an N type clad layer 3, an N type active layer 4, a P type clad layer 5, and an N type cap layer 11 are laminated in order on the substrate thereof. Then Zn is made to be diffused in a stripe type to the center part of the cap layer 11 thereof, a P type diffusion region 12 is formed from the surface up to reach the neighborhood of the active layer 4 to form the current path, and an electrode 9 on the N side is formed on the substrate 1 and an electrode 10 on the P side is formed on the N type cap layer 11 respectively in succession by evaporation. Therefore because extension of current is generated in the P type clad layer 5, diffusion of Zn is made as deep in the clad layer 5 up to reach the active layer 4, and accordingly the region having distribution of thickness of the active layer 4 is excited precisely in the very narrow range only at the center part. |
