| 摘要 |
An integrated circuit semiconductor device having an improved wiring structure is disclosed. An insulating film and a semiconductor layer are formed in sequence on an upper surface of a semiconductor body, and first and second wiring layers are formed in the semiconductor body and in the semiconductor layer, respectively. A plurality of circuit elements are formed in the semiconductor layer on the insulating film, and each of the elements is connected to the first and second wiring layers. When the elements are memory cells, the first wiring layers may be used as bit lines.
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