SEMICONDUCTOR DEVICE AND THE METHOD OF FORMING THE SAME

摘要

A semiconductor device and a formation method thereof are provided to form a share contact plug of a dumbbell shape, thereby reducing damage of a spacer disposed in a side of a gate electrode in a share contact hole forming process. A gate insulating layer(120) and a gate electrode(130) are formed on a semiconductor substrate(100). A spacer(140) is formed in a side wall of the gate electrode. An interlayer insulating film(150) is formed on the front of the semiconductor substrate. A shared contact hole including a first part(180a) exposing the gate electrode by pattering the interlayer insulating film, a second part(180b) exposing the semiconductor substrate and a third part(180c) connecting the first part and the second part is formed. The first part, the second part and the third part are arranged along a first direction. The first and second parts respectively have maximum widths in a second direction orthogonal to the first direction. The third part has a width smaller than the maximum widths of the first and second parts in the second direction.