Process of fabricating a heterojunction field effect transistor,申请号US19890410070-传众专利搜索

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发明名称	Process of fabricating a heterojunction field effect transistor
摘要
申请公布号	US5026655(A)	申请公布日期	1991.06.25
申请号	US19890410070	申请日期	1989.09.21
申请人	NEC CORPORATION	发明人	OHATA, KEIICHI
分类号	H01L29/812;H01L21/203;H01L21/337;H01L21/338;H01L29/08;H01L29/205;H01L29/778	主分类号	H01L29/812
代理机构		代理人
主权项
地址

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