| 摘要 |
PURPOSE:To eliminate a resolution limit which depends on an exposure mask or an exposure light and to form a fine pattern by a method wherein a reflected light from a sidewall of an opening part in a substratum is utilized and only a photosensitive resin film on the opening part in the substratum is exposed to a light so as to be removed by a developing treatment. CONSTITUTION:A first photosensitive resin film 4 is formed on a film 2 to be etched and an insulating film 3 which have been removed on a semiconductor substrate 1. Then, the photosensitive resin film 4 is irradiated selectively with an exposure light by using a prescribed mask; after that, a developing treatment is executed; a first prescribed opening part 5 is formed in the photosensitive resin film 4. Then, by making use of the photo-sensitive resin film 4 as an etching mask, an opening part 6 whose sidewall has an angle theta smaller than the vertical with reference to the surface of the semiconductor substrate is formed in the insulating film 3. Then, a metal film such as an aluminum film 7 or the like as a film having a high reflectance is formed on the whole surface; after that, a second photosensitive resin film 8 is formed. Then, the whole surface of the photosensitive resin film 8 is irradiated with an exposure light X. Then, a developing treatment is executed; an opening part 20 is formed in the photosensitive resin film 8; after that, an opening part 21 is formed in the metal film 7 and the film 2 to be etched. |
