| 摘要 |
964,370. Semi-conductor devices. SIEMENSSCHUCKERTWERKE A.G. Feb. 22, 1962 [Feb. 22, 1961], No. 7031/62. Addition to 827,762. Heading H1K. In a process for joining a semi-conductor device 11 to a carrier 5 and 6 the carrier is mounted in an aperture in the base of an inverted cup-shaped member 8 in a cup-shaped mould 1 and the exposed parts of the semiconductor body are surrounded with a filler material 14 which prevents metal evaporated from the parts of the carrier contaminating the semi-conductor material surface. In the described embodiment the carrier comprises a part 6 of a material, e.g. molybdenum, having a coefficient of expansion similar to that of the semi-conductor wafer soldered to a part 5 of a material, e.g. copper of expansion coefficient similar to that of the housing in which the device will be encapsulated. The carrier is mounted so that only the surface to which the semi-conductor is to be attached is exposed above the surface of the member 8 which, together with plate 1, is made of graphite. On to the surface of the carrier are stacked the component parts of the device, e.g. an aluminium foil 10, a weakly P-type monocrystalline silicon wafer 11, a gold-antimony alloy foil 12, and a tantalum coated tungsten connecting member 13. The filler material, e.g. fine grain graphite, magnesium oxide, or aluminium oxide is pressed around the device and held in place by plate 15 and weight 16. The assembly is then heated to fix the semi-conductor to the carrier and alloy the electrodes to the wafer. Copper atoms evaporated off part 5 escape through holes 2 and are prevented from contaminating the device. |
