| 摘要 |
PURPOSE:To lessen a semiconductor device in operating voltage by a method wherein a P-type InGaAsP layer which is doped high enough in concentration to compensate the degeneration of a band is provided onto a P-type InP substrate, and a P-side ohmic contact is made at the InGaAs layer. CONSTITUTION:A P-InGaAsP layer 6 which is doped high enough in concentration to compensate the degeneration of a band is provided onto a P-InP substrate 1, and a P-side ohmic contact is made at the InGaAs layer 6. As the P-InGaAsP layer 6 is doped high enough in concentration to compensate the degeneration of a band, an excellent ohmic contact can be obtained. When the P-InGaAsP layer 6 is formed through an LPE method, it can be made 1X10<19>cm<-3> or more in carrier concentration by increasing an impurity charge into melt. A contact resistance between the highly doped P-InGaAsP layer 6 and a P electrode 5 is 1X10<-4>cm or below, so that a semiconductor device of this design can be made low in operating voltage. |
